Smoothing of patterned gallium arsenide surfaces during epitaxial growth
Control over the surface structure of semiconductor films during growth is critical for devices of recent technological importance. Typically the length scales of interest range from nanometers to micrometers. Examples include the size and spacing of quantum dots in quantum dot lasers, and the pi...
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| Language: | English |
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2009
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| Online Access: | http://hdl.handle.net/2429/8120 |