Characterization of semi-insulating liquid encapsulated Czochralski gallium arsenide
Deep levels in semi-insulating gallium arsenide (SI GaAs) have been associated with effects such as threshold voltage variations, sidegating and low frequency oscillations in transistors fabricated using this material. The distribution of deep levels is not uniform, which is a key concern to IC m...
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| Language: | English |
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2009
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| Online Access: | http://hdl.handle.net/2429/5363 |