Molecular beam epitaxy growth technology and properties of GaAsBi alloys
In this thesis, molecular beam epitaxy (MBE) technology and the MBE growth of GaAsBi are investigated. MBE is a non-equilibrium technique whereby precisely controlled molecular beams are deposited onto a heated substrate at temperatures much lower than for equilibrium growth techniques. A novel clos...
| Main Author: | |
|---|---|
| Language: | English |
| Published: |
University of British Columbia
2014
|
| Online Access: | http://hdl.handle.net/2429/46478 |