Pattern formation in lateral oxidation of aluminum-rich AlxGa1-xAs
A high-aluminum-content AlxGa1-xAs (x > 0.9) layer in an epitaxial III-V semiconductor heterostructure can be preferentially oxidised from an exposed edge at 375-450C in a wet N2 ambient. In this way, buried aluminum oxide layers can be formed which are useful for optical and electronic confin...
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| Language: | English |
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2009
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| Online Access: | http://hdl.handle.net/2429/11425 |