Fabricating silicon mesh bolometers for BAM
Silicon membranes have been fabricated and etched into mesh structures using both wet and Cl₂ plasma etching. The most repeatable process involoved wet etching triple bonded wafers with a buried oxide layer. A recipe to build Si meshes, with a grid spacing of 375 μm and leg cross-sections of 5 μm...
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ndltd-LACETR-oai-collectionscanada.gc.ca-BVAU.2429-102482014-03-14T15:44:02Z Fabricating silicon mesh bolometers for BAM Chen, Karen Silicon membranes have been fabricated and etched into mesh structures using both wet and Cl₂ plasma etching. The most repeatable process involoved wet etching triple bonded wafers with a buried oxide layer. A recipe to build Si meshes, with a grid spacing of 375 μm and leg cross-sections of 5 μm by 30 μm, from 5 μm thick membranes is described. The meshes are supported by 4 legs that are each 30 μm wide and 1 mm long. Also, the resistivity of thin gold films was measured for temperatures ranging from 4.2 K to 300 K. It was found that the ideal thickness, that leads to a sheet resistance of at 300 mK for of 5μm by 385μm gold lines, was 150 Å. A bolometer building process that incorporates the gold evaporations with the mesh building procedure is given, although preliminary attempts to produce bolometers have been unsuccessful. 2009-07-06T19:52:26Z 2009-07-06T19:52:26Z 2000 2009-07-06T19:52:26Z 2000-05 Electronic Thesis or Dissertation http://hdl.handle.net/2429/10248 eng UBC Retrospective Theses Digitization Project [http://www.library.ubc.ca/archives/retro_theses/] |
collection |
NDLTD |
language |
English |
sources |
NDLTD |
description |
Silicon membranes have been fabricated and etched into mesh structures using both
wet and Cl₂ plasma etching. The most repeatable process involoved wet etching triple
bonded wafers with a buried oxide layer. A recipe to build Si meshes, with a grid
spacing of 375 μm and leg cross-sections of 5 μm by 30 μm, from 5 μm thick membranes
is described. The meshes are supported by 4 legs that are each 30 μm wide and 1 mm
long. Also, the resistivity of thin gold films was measured for temperatures ranging from
4.2 K to 300 K. It was found that the ideal thickness, that leads to a sheet resistance of
at 300 mK for of 5μm by 385μm gold lines, was 150 Å. A bolometer building
process that incorporates the gold evaporations with the mesh building procedure is
given, although preliminary attempts to produce bolometers have been unsuccessful. |
author |
Chen, Karen |
spellingShingle |
Chen, Karen Fabricating silicon mesh bolometers for BAM |
author_facet |
Chen, Karen |
author_sort |
Chen, Karen |
title |
Fabricating silicon mesh bolometers for BAM |
title_short |
Fabricating silicon mesh bolometers for BAM |
title_full |
Fabricating silicon mesh bolometers for BAM |
title_fullStr |
Fabricating silicon mesh bolometers for BAM |
title_full_unstemmed |
Fabricating silicon mesh bolometers for BAM |
title_sort |
fabricating silicon mesh bolometers for bam |
publishDate |
2009 |
url |
http://hdl.handle.net/2429/10248 |
work_keys_str_mv |
AT chenkaren fabricatingsiliconmeshbolometersforbam |
_version_ |
1716651923236454400 |