Fabricating silicon mesh bolometers for BAM

Silicon membranes have been fabricated and etched into mesh structures using both wet and Cl₂ plasma etching. The most repeatable process involoved wet etching triple bonded wafers with a buried oxide layer. A recipe to build Si meshes, with a grid spacing of 375 μm and leg cross-sections of 5 μm...

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Main Author: Chen, Karen
Language:English
Published: 2009
Online Access:http://hdl.handle.net/2429/10248
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spelling ndltd-LACETR-oai-collectionscanada.gc.ca-BVAU.2429-102482014-03-14T15:44:02Z Fabricating silicon mesh bolometers for BAM Chen, Karen Silicon membranes have been fabricated and etched into mesh structures using both wet and Cl₂ plasma etching. The most repeatable process involoved wet etching triple bonded wafers with a buried oxide layer. A recipe to build Si meshes, with a grid spacing of 375 μm and leg cross-sections of 5 μm by 30 μm, from 5 μm thick membranes is described. The meshes are supported by 4 legs that are each 30 μm wide and 1 mm long. Also, the resistivity of thin gold films was measured for temperatures ranging from 4.2 K to 300 K. It was found that the ideal thickness, that leads to a sheet resistance of at 300 mK for of 5μm by 385μm gold lines, was 150 Å. A bolometer building process that incorporates the gold evaporations with the mesh building procedure is given, although preliminary attempts to produce bolometers have been unsuccessful. 2009-07-06T19:52:26Z 2009-07-06T19:52:26Z 2000 2009-07-06T19:52:26Z 2000-05 Electronic Thesis or Dissertation http://hdl.handle.net/2429/10248 eng UBC Retrospective Theses Digitization Project [http://www.library.ubc.ca/archives/retro_theses/]
collection NDLTD
language English
sources NDLTD
description Silicon membranes have been fabricated and etched into mesh structures using both wet and Cl₂ plasma etching. The most repeatable process involoved wet etching triple bonded wafers with a buried oxide layer. A recipe to build Si meshes, with a grid spacing of 375 μm and leg cross-sections of 5 μm by 30 μm, from 5 μm thick membranes is described. The meshes are supported by 4 legs that are each 30 μm wide and 1 mm long. Also, the resistivity of thin gold films was measured for temperatures ranging from 4.2 K to 300 K. It was found that the ideal thickness, that leads to a sheet resistance of at 300 mK for of 5μm by 385μm gold lines, was 150 Å. A bolometer building process that incorporates the gold evaporations with the mesh building procedure is given, although preliminary attempts to produce bolometers have been unsuccessful.
author Chen, Karen
spellingShingle Chen, Karen
Fabricating silicon mesh bolometers for BAM
author_facet Chen, Karen
author_sort Chen, Karen
title Fabricating silicon mesh bolometers for BAM
title_short Fabricating silicon mesh bolometers for BAM
title_full Fabricating silicon mesh bolometers for BAM
title_fullStr Fabricating silicon mesh bolometers for BAM
title_full_unstemmed Fabricating silicon mesh bolometers for BAM
title_sort fabricating silicon mesh bolometers for bam
publishDate 2009
url http://hdl.handle.net/2429/10248
work_keys_str_mv AT chenkaren fabricatingsiliconmeshbolometersforbam
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