| Summary: | Silicon membranes have been fabricated and etched into mesh structures using both
wet and Cl₂ plasma etching. The most repeatable process involoved wet etching triple
bonded wafers with a buried oxide layer. A recipe to build Si meshes, with a grid
spacing of 375 μm and leg cross-sections of 5 μm by 30 μm, from 5 μm thick membranes
is described. The meshes are supported by 4 legs that are each 30 μm wide and 1 mm
long. Also, the resistivity of thin gold films was measured for temperatures ranging from
4.2 K to 300 K. It was found that the ideal thickness, that leads to a sheet resistance of
at 300 mK for of 5μm by 385μm gold lines, was 150 Å. A bolometer building
process that incorporates the gold evaporations with the mesh building procedure is
given, although preliminary attempts to produce bolometers have been unsuccessful.
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