Compact models for the high-frequency characteristics of modern bipolar transistors
Modern bipolar transistors are characterized by shrinking dimensions (now on the order of a mean-free path length for carrier scattering), reduced parasitics (particularly in heterojunction devices), and increasing cutoff frequencies (now over 100 GHz). As a result, the classical models used for...
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| Language: | English |
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2009
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| Online Access: | http://hdl.handle.net/2429/10107 |