Pulsed laser annealing of ion implanted gallium arsenide
Call number: LD2668 .T4 EECE 1987 H67 === Master of Science === Electrical and Computer Engineering
Main Author: | Horak, Arkady Michael. |
---|---|
Published: |
2015
|
Subjects: | |
Online Access: | http://hdl.handle.net/2097/22438 |
Similar Items
-
A study of Hall-effect measurement techniques on pulsed laser annealed gallium arsenide
by: Chin, Timothy W. H.
Published: (2015) -
Laser annealing of donor implanted gallium arsenide
by: Akintunde, J. A.
Published: (1982) -
Pulsed laser annealing and characterization of GaAs substrates
by: Shieh, Yanan F.
Published: (2015) -
Rutherford backscattering in ion-implanted and pulsed laser annealed Si and Ge
by: Kiger, Shanalyn.
Published: (2015) -
A comparative study of laser and thermal annealing of zinc ion implanted gallium arsenide
by: Kular, S. S.
Published: (1979)