Influence of Size and Interface Effects of Silicon Nanowire and Nanosheet for Ultra-Scaled Next Generation Transistors
Indiana University-Purdue University Indianapolis (IUPUI) === In this work, we investigate the trade-off between scalability and reliability for next generation logic-transistors i.e. Gate-All-Around (GAA)-FET, Multi-Bridge-Channel (MBC)-FET. First, we analyze the electronic properties (i.e. bandgap...
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| Language: | en |
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2020
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| Online Access: | http://hdl.handle.net/1805/23570 |