Crescimento e caracterização de heteroestruturas tensionadas de InxGa1-x-As/GaAs

Crescimento e caracterização de heteroestruturas tensionadas de InxGa1-x-As/GaAs

Utilizando a técnica de epitaxia por feixe molecular (MBE), crescemos heteroestruturas tensionadas de InxGa1-xAs sobre substratos de GaAs (100). A composição de In, a espessura para a transição 2D-3D e a espessura crítica (hc) foram determinadas através da análise \"in situ\" pelo RHEE...

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Bibliographic Details
Main Author:	Artemis Marti Ceschin
Other Authors:	Maximo Siu Li
Language:	Portuguese
Published:	Universidade de São Paulo 1992
Subjects:	Caracterização Crescimento Heteroestruturas tensionadas InxGa1-x-As/GaAs Characterization Growth Heterostructures InxGa1-xAs/GaAs Stressed
Online Access:	http://www.teses.usp.br/teses/disponiveis/54/54132/tde-06022014-104232/

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