Caracterização óptica e elétrica de filmes finos de GaAs dopados com mg crescidos pela técnica de MBE
=== Magnesium doped GaAs thin films grown in (100) and (111)B Semi-Insulating GaAs substrates by MBE weren't deeply investigated until today. Mg is a promising option (non-carcinogenic and non-toxic) to replace Beryllium as a p-type dopant in III -V materials, such as GaAs, GaN and alloys[1-3]...
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| Format: | Others |
| Language: | Portuguese |
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Universidade Federal de Minas Gerais
2013
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| Online Access: | http://hdl.handle.net/1843/BUOS-97WHSR |