$In-situ study of Ga2O3 thermal expansion and epitaxy by synchrotron based x-ray diffraction and reflection high-energy electron diffraction$

In-situ study of Ga2O3 thermal expansion and epitaxy by synchrotron based x-ray diffraction and reflection high-energy electron diffraction

Diese Arbeit präsentiert eine umfassende in-situ Studie zur thermischen Ausdehnung von β-Ga2O3 im Temperaturbereich von Raumtemperatur (RT) bis 1200 K sowie zum Wachstum dünner Ga2O3 Schichten durch plasmaunterstützte Molekularstrahlepitaxie (MBE). Hierfür kamen synchrotron-basierte hochauflösende R...

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Bibliographic Details
Main Author:	Cheng, Zongzhe
Other Authors:	Riechert, Henning
Format:	Doctoral Thesis
Language:	English
Published:	Humboldt-Universität zu Berlin 2019
Subjects:	Hochauflösende Röntgenbeugung Molekularstrahlepitaxie, Beugung hochenergetischer Elektronen bei Reflexion thermische Ausdehnung kinematische Näherung transparente halbleitende Oxide high-resolution x-ray diffraction molecular beam epitaxy reflection high-energy electron diffraction thermal expansion kinematic approximation transparent semiconducting oxides 530 Physik ddc:530
Online Access:	http://edoc.hu-berlin.de/18452/21195 http://nbn-resolving.de/urn:nbn:de:kobv:11-110-18452/21195-5 http://dx.doi.org/10.18452/20403

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