Transmission electron microscopic investigation of the growth of group III sesquioxides Ga2O3

Transmission electron microscopic investigation of the growth of group III sesquioxides Ga2O3

In dieser Arbeit werden die grundlegenden Wachstumsprozesse von Ga2O3 , mittels Transmissionselektronenmikroskopie analysiert. Dazu gehört die Untersuchung des heteroepitaktischen Wachstums von Galliumoxidschichten welche mittels Molekularstrahlepitaxie (molekular beam epitaxy MBE), der gepulsten La...

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Bibliographic Details
Main Author:	Schewski, Robert
Other Authors:	Riechert, Henning
Format:	Doctoral Thesis
Language:	English
Published:	Humboldt-Universität zu Berlin 2019
Subjects:	Ga2O3 Transmissionselektronenmikroskopie Epitaxy Struckturbestimmung Transmission electron microscopy Structure 530 Physik UH 6302 ddc:530
Online Access:	http://edoc.hu-berlin.de/18452/20586 http://nbn-resolving.de/urn:nbn:de:kobv:11-110-18452/20586-9 http://dx.doi.org/10.18452/19789

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