Epitaxial growth and characterization of GeTe and GeTe/Sb2Te3 superlattices

Epitaxial growth and characterization of GeTe and GeTe/Sb2Te3 superlattices

Die epitaktische Wachstum von GeTe Dünnschichten und Sb2Te3/GeTe Übergittern durch Molekularstrahlepitaxie wird auf drei verschiedenen Silizium Oberflächen gezeigt: Si(111)−(7×7), Si(111)−(√3×√3)R30°−Sb, und Si(111)−(1×1)−H. Mit Röntgenstrukturanalyse wird bewiesen, dass die epitaktische Beziehung d...

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Bibliographic Details
Main Author:	Wang, Rui Ning
Other Authors:	Riechert, Henning
Format:	Doctoral Thesis
Language:	English
Published:	Humboldt-Universität zu Berlin 2017
Subjects:	MBE Phasenwechselmaterial GeTe Sb2Te3 GeSbTe Chalkogenide Übergitter Röntgenstrukturanalyse RHEED Raman-Spektroskopie Resonanzstruktur Peierls-Instabilität Vermischung phase-change materials chalcogenide superlattice X-ray diffraction reflection high-energy electron diffraction Raman spectroscopy resonant bonding Peierls distorsion intermixing 530 Physik UP 7550 ddc:530
Online Access:	http://edoc.hu-berlin.de/18452/18806 http://nbn-resolving.de/urn:nbn:de:kobv:11-110-18452/18806-9 http://dx.doi.org/10.18452/18135

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