Optoelectronic and Structural Properties of Group III-Nitride Semiconductors Grown by High Pressure MOCVD and Migration Enhanced Plasma Assisted MOCVD
The objective of this dissertation is to understand the structural and optoelectronic properties of group III-nitride materials grown by High-Pressure Metal Organic Chemical Vapor Deposition (HP-MOCVD) and Migration Enhanced Plasma Assisted MOCVD by FTIR reflectance spectroscopy, Raman spectroscopy,...
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| Format: | Others |
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ScholarWorks @ Georgia State University
2016
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| Online Access: | http://scholarworks.gsu.edu/phy_astr_diss/89 http://scholarworks.gsu.edu/cgi/viewcontent.cgi?article=1089&context=phy_astr_diss |