Multiscale electro-thermal modeling of AlGaN/GaN heterostructure field effect transistors
Understanding the magnitude of the temperature in AlGaN/GaN heterostructure fi eld e ffect transistors(HFETs) is a critical aspect of understanding their reliability and providing proper thermal management. At present, most models used to determine the temperature rise in these devices are based on...
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| Language: | en_US |
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Georgia Institute of Technology
2015
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| Online Access: | http://hdl.handle.net/1853/53139 |