Mono-layer C-face epitaxial graphene for high frequency electronics
As the thinnest material ever with high carrier mobility and saturation velocity, graphene is considered as a candidate for future high speed electronics. After pioneering research on graphene-based electronics at Georgia Tech, epitaxial graphene on SiC, along with other synthesized graphene, has be...
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| Format: | Others |
| Language: | en_US |
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Georgia Institute of Technology
2014
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| Online Access: | http://hdl.handle.net/1853/52268 |