Characterization of selective epitaxial graphene growth on silicon carbide: limitations and opportunities
The need for post-CMOS nanoelectronics has led to the investigation of innovative device structures and materials. Graphene, a zero bandgap semiconductor with ballistic transport properties, has great potential to extend diversification and miniaturization beyond the limits of CMOS. The goal of th...
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Georgia Institute of Technology
2012
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| Online Access: | http://hdl.handle.net/1853/43624 |