Electron-enhanced etching of SI(100) by atomic and molecular hydrogen

Bibliographic Details
Main Author:	Clemons, John L.
Published:	Georgia Institute of Technology 2009
Subjects:	Atomic beams Molecular beams Etching
Online Access:	http://hdl.handle.net/1853/30416

id	ndltd-GATECH-oai-smartech.gatech.edu-1853-30416
record_format	oai_dc
spelling	ndltd-GATECH-oai-smartech.gatech.edu-1853-304162013-12-15T03:44:13ZElectron-enhanced etching of SI(100) by atomic and molecular hydrogenClemons, John L.Atomic beamsMolecular beamsEtchingGeorgia Institute of Technology2009-10-08T11:31:27Z2009-10-08T11:31:27Z1992-05Dissertation356099http://hdl.handle.net/1853/30416
collection	NDLTD
sources	NDLTD
topic	Atomic beams Molecular beams Etching
spellingShingle	Atomic beams Molecular beams Etching Clemons, John L. Electron-enhanced etching of SI(100) by atomic and molecular hydrogen
author	Clemons, John L.
author_facet	Clemons, John L.
author_sort	Clemons, John L.
title	Electron-enhanced etching of SI(100) by atomic and molecular hydrogen
title_short	Electron-enhanced etching of SI(100) by atomic and molecular hydrogen
title_full	Electron-enhanced etching of SI(100) by atomic and molecular hydrogen
title_fullStr	Electron-enhanced etching of SI(100) by atomic and molecular hydrogen
title_full_unstemmed	Electron-enhanced etching of SI(100) by atomic and molecular hydrogen
title_sort	electron-enhanced etching of si(100) by atomic and molecular hydrogen
publisher	Georgia Institute of Technology
publishDate	2009
url	http://hdl.handle.net/1853/30416
work_keys_str_mv	AT clemonsjohnl electronenhancedetchingofsi100byatomicandmolecularhydrogen
_version_	1716619995507589120

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