The study of alternating flow chemical vapor infiltration and a novel kinetics determination technique for the vapor deposition of silicon carbide via the decomposition of methyltrichlorosilane

The study of alternating flow chemical vapor infiltration and a novel kinetics determination technique for the vapor deposition of silicon carbide via the decomposition of methyltrichlorosilane

Bibliographic Details
Main Author: Chiang, Daniel Young
Published: Georgia Institute of Technology 2008
Subjects:
Vapor-plating
Ceramic-matrix composites
Online Access:http://hdl.handle.net/1853/19991
id ndltd-GATECH-oai-smartech.gatech.edu-1853-19991
record_format oai_dc
spelling ndltd-GATECH-oai-smartech.gatech.edu-1853-199912013-12-15T03:37:47ZThe study of alternating flow chemical vapor infiltration and a novel kinetics determination technique for the vapor deposition of silicon carbide via the decomposition of methyltrichlorosilaneChiang, Daniel YoungVapor-platingCeramic-matrix compositesGeorgia Institute of Technology2008-02-21T12:32:23Z2008-02-21T12:32:23Z1999-12Dissertationhttp://hdl.handle.net/1853/19991503427Access restricted to authorized Georgia Tech users only.
collection NDLTD
sources NDLTD
topic Vapor-plating
Ceramic-matrix composites
spellingShingle Vapor-plating
Ceramic-matrix composites
Chiang, Daniel Young
The study of alternating flow chemical vapor infiltration and a novel kinetics determination technique for the vapor deposition of silicon carbide via the decomposition of methyltrichlorosilane
author Chiang, Daniel Young
author_facet Chiang, Daniel Young
author_sort Chiang, Daniel Young
title The study of alternating flow chemical vapor infiltration and a novel kinetics determination technique for the vapor deposition of silicon carbide via the decomposition of methyltrichlorosilane
title_short The study of alternating flow chemical vapor infiltration and a novel kinetics determination technique for the vapor deposition of silicon carbide via the decomposition of methyltrichlorosilane
title_full The study of alternating flow chemical vapor infiltration and a novel kinetics determination technique for the vapor deposition of silicon carbide via the decomposition of methyltrichlorosilane
title_fullStr The study of alternating flow chemical vapor infiltration and a novel kinetics determination technique for the vapor deposition of silicon carbide via the decomposition of methyltrichlorosilane
title_full_unstemmed The study of alternating flow chemical vapor infiltration and a novel kinetics determination technique for the vapor deposition of silicon carbide via the decomposition of methyltrichlorosilane
title_sort study of alternating flow chemical vapor infiltration and a novel kinetics determination technique for the vapor deposition of silicon carbide via the decomposition of methyltrichlorosilane
publisher Georgia Institute of Technology
publishDate 2008
url http://hdl.handle.net/1853/19991
work_keys_str_mv AT chiangdanielyoung thestudyofalternatingflowchemicalvaporinfiltrationandanovelkineticsdeterminationtechniqueforthevapordepositionofsiliconcarbideviathedecompositionofmethyltrichlorosilane
AT chiangdanielyoung studyofalternatingflowchemicalvaporinfiltrationandanovelkineticsdeterminationtechniqueforthevapordepositionofsiliconcarbideviathedecompositionofmethyltrichlorosilane
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