A large-signal model for the RF power MOSFET

Bibliographic Details
Main Author:	Bordelon, John H.
Published:	Georgia Institute of Technology 2007
Subjects:	Metal oxide semiconductor field-effect transistors Electronic circuit design
Online Access:	http://hdl.handle.net/1853/15048

id	ndltd-GATECH-oai-smartech.gatech.edu-1853-15048
record_format	oai_dc
spelling	ndltd-GATECH-oai-smartech.gatech.edu-1853-150482013-12-15T03:34:17ZA large-signal model for the RF power MOSFETBordelon, John H.Metal oxide semiconductor field-effect transistorsElectronic circuit designGeorgia Institute of Technology2007-06-22T13:21:17Z2007-06-22T13:21:17Z1999-05Dissertationhttp://hdl.handle.net/1853/15048590364Access restricted to authorized Georgia Tech users only.
collection	NDLTD
sources	NDLTD
topic	Metal oxide semiconductor field-effect transistors Electronic circuit design
spellingShingle	Metal oxide semiconductor field-effect transistors Electronic circuit design Bordelon, John H. A large-signal model for the RF power MOSFET
author	Bordelon, John H.
author_facet	Bordelon, John H.
author_sort	Bordelon, John H.
title	A large-signal model for the RF power MOSFET
title_short	A large-signal model for the RF power MOSFET
title_full	A large-signal model for the RF power MOSFET
title_fullStr	A large-signal model for the RF power MOSFET
title_full_unstemmed	A large-signal model for the RF power MOSFET
title_sort	large-signal model for the rf power mosfet
publisher	Georgia Institute of Technology
publishDate	2007
url	http://hdl.handle.net/1853/15048
work_keys_str_mv	AT bordelonjohnh alargesignalmodelfortherfpowermosfet AT bordelonjohnh largesignalmodelfortherfpowermosfet
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