Advanced numerical simulation modeling for semiconductor devices and it application to metal-semiconductor-metal photodetectors
Main Author: | Salem, Ali F |
---|---|
Format: | Others |
Language: | en_US |
Published: |
Georgia Institute of Technology
2007
|
Subjects: | |
Online Access: | http://hdl.handle.net/1853/13834 |
Similar Items
-
The design, fabrication, characterization, and modeling of a novel semiconductor device : the metal oxide semiconductor bipolar junction transistor
by: Okada, David N
Published: (2009) -
Interdigitated metal-semiconductor-metal (MSM) photodetector on III-V compound semiconductor materials.
Published: (1995) -
Metal-Insulator-Semiconductor Photodetectors
by: Chu-Hsuan Lin, et al.
Published: (2010-09-01) -
Metal-Semiconductor-Metal photodetectors and their integration via epitaxial liftoff
by: Hargis, Marian Crawford
Published: (2007) -
Computer-aided-design of metal-oxide semiconductor circuitry using a process-sensitive device model
by: Parker, Richard Frederick
Published: (2007)