Herstellung anwendungsbezogener SiO2-Grabenstrukturen im sub-μm-Bereich durch RIE und ICP-Prozesse.

Herstellung anwendungsbezogener SiO2-Grabenstrukturen im sub-μm-Bereich durch RIE und ICP-Prozesse.

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Herstellung anwendungsbezogener SiO2- Grabenstrukturen im sub-μm-Bereich durch RIE und ICP-Prozesse.

Bibliographic Details
Main Author:	Schäfer, Toni
Other Authors:	TU Chemnitz, Fakultät für Maschinenbau
Format:	Dissertation
Language:	deu
Published:	Universitätsbibliothek Chemnitz 2006
Subjects:	CF4 CHF3 FIB Plasmapolymer RIE RIE grass Selektivität bowing differential charging facetting microtrenching Ätzrate ddc:620 Anisotropie Elektromigration Fluidik ICP Lag Passivierung Photolithographie <Halbleitertechnologie> Photoresist Plasmaätzen Polymere Rasterelektronenmikroskop Siliciumdioxid Trench <Mikroelektronik>
Online Access:	http://nbn-resolving.de/urn:nbn:de:swb:ch1-200600953 http://nbn-resolving.de/urn:nbn:de:swb:ch1-200600953 http://www.qucosa.de/fileadmin/data/qucosa/documents/5208/data/Diplomarbeit.pdf http://www.qucosa.de/fileadmin/data/qucosa/documents/5208/20060095.txt

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