Präzipitation von SiO2 in Silizium nach einer Sauerstoff-Hochdosisimplantation
During ion beam synthesis of compounds in Si a specific redistribution process is responsible for the modification of the implant profile towards a uniform buried compound layer. This process is referred to as Ostwald ripening. Implantation of substoichiometric doses of reactive species leads to str...
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| Format: | Others |
| Language: | deu |
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Forschungszentrum Dresden
2010
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| Online Access: | http://nbn-resolving.de/urn:nbn:de:bsz:d120-qucosa-30312 http://nbn-resolving.de/urn:nbn:de:bsz:d120-qucosa-30312 http://www.qucosa.de/fileadmin/data/qucosa/documents/3031/1946.pdf |
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