Präzipitation von SiO2 in Silizium nach einer Sauerstoff-Hochdosisimplantation
During ion beam synthesis of compounds in Si a specific redistribution process is responsible for the modification of the implant profile towards a uniform buried compound layer. This process is referred to as Ostwald ripening. Implantation of substoichiometric doses of reactive species leads to str...
| Main Author: | |
|---|---|
| Other Authors: | |
| Format: | Others |
| Language: | deu |
| Published: |
Forschungszentrum Dresden
2010
|
| Online Access: | http://nbn-resolving.de/urn:nbn:de:bsz:d120-qucosa-30312 http://nbn-resolving.de/urn:nbn:de:bsz:d120-qucosa-30312 http://www.qucosa.de/fileadmin/data/qucosa/documents/3031/1946.pdf |