Ion Beam Synthesis of Ge Nanowires
The formation of Ge nanowires in V-grooves has been studied experimentally as well as theoretically. As substrate oxide covered Si V-grooves were used formed by anisotropic etching of (001)Si wafers and subsequent oxidation of their surface. Implantation of 1E17 Ge+ cm^-2 at 70 keV was carried out i...
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| Format: | Others |
| Language: | English |
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Forschungszentrum Dresden
2010
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| Online Access: | http://nbn-resolving.de/urn:nbn:de:bsz:d120-qucosa-29801 http://nbn-resolving.de/urn:nbn:de:bsz:d120-qucosa-29801 http://www.qucosa.de/fileadmin/data/qucosa/documents/2980/3649.pdf |