Ion Beam Synthesis of Ge Nanowires
The formation of Ge nanowires in V-grooves has been studied experimentally as well as theoretically. As substrate oxide covered Si V-grooves were used formed by anisotropic etching of (001)Si wafers and subsequent oxidation of their surface. Implantation of 1E17 Ge+ cm^-2 at 70 keV was carried out i...
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Forschungszentrum Dresden
2010
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ndltd-DRESDEN-oai-qucosa.de-bsz-d120-qucosa-298012013-01-07T19:52:52Z Ion Beam Synthesis of Ge Nanowires Müller, Torsten Ion Beam Synthesis Nanowires Surface Sputtering Redeposition Kinetic Monte Carlo Simulation The formation of Ge nanowires in V-grooves has been studied experimentally as well as theoretically. As substrate oxide covered Si V-grooves were used formed by anisotropic etching of (001)Si wafers and subsequent oxidation of their surface. Implantation of 1E17 Ge+ cm^-2 at 70 keV was carried out into the oxide layer covering the V-grooves. Ion irradiation induces shape changes of the V-grooves, which are captured in a novel continuum model of surface evolution. It describes theoretically the effects of sputtering, redeposition of sputtered atoms, and swelling. Thereby, the time evolution of the target surface is determined by a nonlinear integro-differential equation, which was solved numerically for the V-groove geometry. A very good agreement is achieved for the predicted surface shape and the shape observed in XTEM images. Surprisingly, the model predicts material (Si, O, Ge) transport into the V-groove bottom which also suggests an Ge accumulation there proven by STEM-EDX investigations. In this Ge rich bottom region, subsequent annealing in N2 atmosphere results in the formation of a nanowire by coalescence of Ge precipitates shown by XTEM images. The process of phase separation during the nanowire growth was studied by means of kinetic 3D lattice Monte-Carlo simulations. These simulations also indicate the disintegration of continuous wires into droplets mediated by thermal fluctuations. Energy considerations have identified a fragmentation threshold and a lower boundary for the droplet radii which were confirmed by the Monte Carlo simulation. The here given results indicate the possibility of achieving nanowires being several nanometers wide by further growth optimizations as well as chains of equally spaced clusters with nearly uniform diameter. Forschungszentrum Dresden Forschungszentrum Rossendorf, Institut für Ionenstrahlphysik und Materialforschung 2010-03-31 doc-type:report application/pdf http://nbn-resolving.de/urn:nbn:de:bsz:d120-qucosa-29801 urn:nbn:de:bsz:d120-qucosa-29801 http://www.qucosa.de/fileadmin/data/qucosa/documents/2980/3649.pdf Wissenschaftlich-Technische Berichte / Forschungszentrum Rossendorf; FZR-309 Januar 2001 eng dcterms:isPartOf:Wissenschaftlich-technische Berichte ; FZR-309 |
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Ion Beam Synthesis Nanowires Surface Sputtering Redeposition Kinetic Monte Carlo Simulation |
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Ion Beam Synthesis Nanowires Surface Sputtering Redeposition Kinetic Monte Carlo Simulation Müller, Torsten Ion Beam Synthesis of Ge Nanowires |
description |
The formation of Ge nanowires in V-grooves has been studied experimentally as well as theoretically. As substrate oxide covered Si V-grooves were used formed by anisotropic etching of (001)Si wafers and subsequent oxidation of their surface. Implantation of 1E17 Ge+ cm^-2 at 70 keV was carried out into the oxide layer covering the V-grooves. Ion irradiation induces shape changes of the V-grooves, which are captured in a novel continuum model of surface evolution. It describes theoretically the effects of sputtering, redeposition of sputtered atoms, and swelling. Thereby, the time evolution of the target surface is determined by a nonlinear integro-differential equation, which was solved numerically for the V-groove geometry. A very good agreement is achieved for the predicted surface shape and the shape observed in XTEM images. Surprisingly, the model predicts material (Si, O, Ge) transport into the V-groove bottom which also suggests an Ge accumulation there proven by STEM-EDX investigations. In this Ge rich bottom region, subsequent annealing in N2 atmosphere results in the formation of a nanowire by coalescence of Ge precipitates shown by XTEM images. The process of phase separation during the nanowire growth was studied by means of kinetic 3D lattice Monte-Carlo simulations. These simulations also indicate the disintegration of continuous wires into droplets mediated by thermal fluctuations. Energy considerations have identified a fragmentation threshold and a lower boundary for the droplet radii which were confirmed by the Monte Carlo simulation. The here given results indicate the possibility of achieving nanowires being several nanometers wide by further growth optimizations as well as chains of equally spaced clusters with nearly uniform diameter. |
author2 |
Forschungszentrum Rossendorf, Institut für Ionenstrahlphysik und Materialforschung |
author_facet |
Forschungszentrum Rossendorf, Institut für Ionenstrahlphysik und Materialforschung Müller, Torsten |
author |
Müller, Torsten |
author_sort |
Müller, Torsten |
title |
Ion Beam Synthesis of Ge Nanowires |
title_short |
Ion Beam Synthesis of Ge Nanowires |
title_full |
Ion Beam Synthesis of Ge Nanowires |
title_fullStr |
Ion Beam Synthesis of Ge Nanowires |
title_full_unstemmed |
Ion Beam Synthesis of Ge Nanowires |
title_sort |
ion beam synthesis of ge nanowires |
publisher |
Forschungszentrum Dresden |
publishDate |
2010 |
url |
http://nbn-resolving.de/urn:nbn:de:bsz:d120-qucosa-29801 http://nbn-resolving.de/urn:nbn:de:bsz:d120-qucosa-29801 http://www.qucosa.de/fileadmin/data/qucosa/documents/2980/3649.pdf |
work_keys_str_mv |
AT mullertorsten ionbeamsynthesisofgenanowires |
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1716471440865230848 |