Porous Ultra Low-k Material Integration Through An Extended Dual Damascene Approach: Pre-/ Post-CMP Curing Comparison
Integration of dielectrics with increased porosity is required to reduce the capacitance of interconnects. However, the conventional dual damascene integration approach is causing negative effects to these materials avoiding their immediate implementation. A post-CMP curing approach could solve some...
| Main Authors: | , , , , |
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| Other Authors: | |
| Format: | Others |
| Language: | English |
| Published: |
Universitätsbibliothek Chemnitz
2016
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| Subjects: | |
| Online Access: | http://nbn-resolving.de/urn:nbn:de:bsz:ch1-qucosa-207108 http://nbn-resolving.de/urn:nbn:de:bsz:ch1-qucosa-207108 http://www.qucosa.de/fileadmin/data/qucosa/documents/20710/Calvo_Porous_Ultra_Low-k_Material_Integration_Through_An_Extended_Dual_Damascene_Approach.pdf http://www.qucosa.de/fileadmin/data/qucosa/documents/20710/signatur.txt.asc |