Porous Ultra Low-k Material Integration Through An Extended Dual Damascene Approach: Pre-/ Post-CMP Curing Comparison

• Main Authors: Calvo, Jesús, Koch, Johannes, Thrun, Xaver, Seidel, Robert, Uhlig, Benjamin
• Other Authors: TU Chemnitz, Fakultät für Elektrotechnik und Informationstechnik
• Format: Others
• Language: English
• Published: Universitätsbibliothek Chemnitz 2016
• Subjects: porous; low-k; integration; CMP; curing; ddc:620; Low-k-Dielektrikum; Integration; Chemisch-mechanisches Polieren
• Online Access: http://nbn-resolving.de/urn:nbn:de:bsz:ch1-qucosa-207108; http://nbn-resolving.de/urn:nbn:de:bsz:ch1-qucosa-207108; http://www.qucosa.de/fileadmin/data/qucosa/documents/20710/Calvo_Porous_Ultra_Low-k_Material_Integration_Through_An_Extended_Dual_Damascene_Approach.pdf; http://www.qucosa.de/fileadmin/data/qucosa/documents/20710/signatur.txt.asc

Integration of dielectrics with increased porosity is required to reduce the capacitance of interconnects. However, the conventional dual damascene integration approach is causing negative effects to these materials avoiding their immediate implementation. A post-CMP curing approach could solve some of these issues. However, materials with porogens being stable at temperatures of the barrier-seed deposition process are not common, hindering this approach. Here, we report on an extended dual-damascene integration approach which permits post-CMP curing.