Growth of amorphous domains in precursor derived Si-C-N-Ceramics studied with small angle X-ray scattering

Amorphous precursor derived ceramics with the composition Si26C41N33 were isothermally annealed at 1500 °C for 5 minutes up to 190 minutes. Two series of measurements were carried out: one at a nitrogen partial pressure of 1 bar and one at a nitrogen partial pressure of 1 mbar. Small angle X-ray sca...

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Main Authors:	Gruber, Wolfgang, Starykov, Oleksiy, Oppermann, Wilhelm, Schmidt, Harald
Other Authors:	TU Clausthal, Institut für Metallurgie, AG Materialphysik
Format:	Article
Language:	English
Published:	Universitätsbibliothek Leipzig 2016
Subjects:	Diffusion Transport diffusion transport ddc:530
Online Access:	http://nbn-resolving.de/urn:nbn:de:bsz:15-qucosa-192939 http://nbn-resolving.de/urn:nbn:de:bsz:15-qucosa-192939 http://www.qucosa.de/fileadmin/data/qucosa/documents/19293/diff_fund_8%282008%299.pdf

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spelling	ndltd-DRESDEN-oai-qucosa.de-bsz-15-qucosa-1929392016-01-05T03:30:10Z Growth of amorphous domains in precursor derived Si-C-N-Ceramics studied with small angle X-ray scattering Gruber, Wolfgang Starykov, Oleksiy Oppermann, Wilhelm Schmidt, Harald Diffusion Transport diffusion transport ddc:530 Amorphous precursor derived ceramics with the composition Si26C41N33 were isothermally annealed at 1500 °C for 5 minutes up to 190 minutes. Two series of measurements were carried out: one at a nitrogen partial pressure of 1 bar and one at a nitrogen partial pressure of 1 mbar. Small angle X-ray scattering was used to determine the diameter of the amorphous domains. The Guinier radius was found to vary from 9.5 Å to 13 Å irrespective of the partial pressure of nitrogen. This finding is quite surprising since crystallization of this material strongly depends on the partial pressure of nitrogen. Universitätsbibliothek Leipzig TU Clausthal, Institut für Metallurgie, AG Materialphysik TU Clausthal, Institut für Physikalische Chemie Universität Leipzig, Fakultät für Physik und Geowissenschaften 2016-01-04 doc-type:article application/pdf http://nbn-resolving.de/urn:nbn:de:bsz:15-qucosa-192939 urn:nbn:de:bsz:15-qucosa-192939 issn:1862-4138 http://www.qucosa.de/fileadmin/data/qucosa/documents/19293/diff_fund_8%282008%299.pdf Diffusion fundamentals 8 (2008) 9, S. 1-7 eng
collection	NDLTD
language	English
format	Article
sources	NDLTD
topic	Diffusion Transport diffusion transport ddc:530
spellingShingle	Diffusion Transport diffusion transport ddc:530 Gruber, Wolfgang Starykov, Oleksiy Oppermann, Wilhelm Schmidt, Harald Growth of amorphous domains in precursor derived Si-C-N-Ceramics studied with small angle X-ray scattering
description	Amorphous precursor derived ceramics with the composition Si26C41N33 were isothermally annealed at 1500 °C for 5 minutes up to 190 minutes. Two series of measurements were carried out: one at a nitrogen partial pressure of 1 bar and one at a nitrogen partial pressure of 1 mbar. Small angle X-ray scattering was used to determine the diameter of the amorphous domains. The Guinier radius was found to vary from 9.5 Å to 13 Å irrespective of the partial pressure of nitrogen. This finding is quite surprising since crystallization of this material strongly depends on the partial pressure of nitrogen.
author2	TU Clausthal, Institut für Metallurgie, AG Materialphysik
author_facet	TU Clausthal, Institut für Metallurgie, AG Materialphysik Gruber, Wolfgang Starykov, Oleksiy Oppermann, Wilhelm Schmidt, Harald
author	Gruber, Wolfgang Starykov, Oleksiy Oppermann, Wilhelm Schmidt, Harald
author_sort	Gruber, Wolfgang
title	Growth of amorphous domains in precursor derived Si-C-N-Ceramics studied with small angle X-ray scattering
title_short	Growth of amorphous domains in precursor derived Si-C-N-Ceramics studied with small angle X-ray scattering
title_full	Growth of amorphous domains in precursor derived Si-C-N-Ceramics studied with small angle X-ray scattering
title_fullStr	Growth of amorphous domains in precursor derived Si-C-N-Ceramics studied with small angle X-ray scattering
title_full_unstemmed	Growth of amorphous domains in precursor derived Si-C-N-Ceramics studied with small angle X-ray scattering
title_sort	growth of amorphous domains in precursor derived si-c-n-ceramics studied with small angle x-ray scattering
publisher	Universitätsbibliothek Leipzig
publishDate	2016
url	http://nbn-resolving.de/urn:nbn:de:bsz:15-qucosa-192939 http://nbn-resolving.de/urn:nbn:de:bsz:15-qucosa-192939 http://www.qucosa.de/fileadmin/data/qucosa/documents/19293/diff_fund_8%282008%299.pdf
work_keys_str_mv	AT gruberwolfgang growthofamorphousdomainsinprecursorderivedsicnceramicsstudiedwithsmallanglexrayscattering AT starykovoleksiy growthofamorphousdomainsinprecursorderivedsicnceramicsstudiedwithsmallanglexrayscattering AT oppermannwilhelm growthofamorphousdomainsinprecursorderivedsicnceramicsstudiedwithsmallanglexrayscattering AT schmidtharald growthofamorphousdomainsinprecursorderivedsicnceramicsstudiedwithsmallanglexrayscattering
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Growth of amorphous domains in precursor derived Si-C-N-Ceramics studied with small angle X-ray scattering

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