Growth of amorphous domains in precursor derived Si-C-N-Ceramics studied with small angle X-ray scattering
Amorphous precursor derived ceramics with the composition Si26C41N33 were isothermally annealed at 1500 °C for 5 minutes up to 190 minutes. Two series of measurements were carried out: one at a nitrogen partial pressure of 1 bar and one at a nitrogen partial pressure of 1 mbar. Small angle X-ray sca...
| Main Authors: | , , , |
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| Other Authors: | |
| Format: | Article |
| Language: | English |
| Published: |
Universitätsbibliothek Leipzig
2016
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| Subjects: | |
| Online Access: | http://nbn-resolving.de/urn:nbn:de:bsz:15-qucosa-192939 http://nbn-resolving.de/urn:nbn:de:bsz:15-qucosa-192939 http://www.qucosa.de/fileadmin/data/qucosa/documents/19293/diff_fund_8%282008%299.pdf |
| Summary: | Amorphous precursor derived ceramics with the composition Si26C41N33 were isothermally annealed at 1500 °C for 5 minutes up to 190 minutes. Two series of measurements were carried out: one at a nitrogen partial pressure of 1 bar and one at a nitrogen partial pressure of 1 mbar. Small angle X-ray scattering was used to determine the diameter of the amorphous domains. The Guinier radius was found to vary from 9.5 Å to 13 Å irrespective of the partial pressure of nitrogen. This finding is quite surprising since crystallization of this material strongly depends on the partial pressure of nitrogen. |
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