Quantitative study of near equilibrium in dissociative mechanism of nickel in silicon

The dissociative mechanism of nickel in silicon has been studied experimentally, assuming the near equilibrium represented by CiCV / Cs = Ci eq C eq / Cs eq , where subscripts i, V, and s represent interstitial nickel atoms, vacancies, and substitutional nickel atoms, respectively, superscript eq r...

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Bibliographic Details
Main Authors: Yoshida, Masayuki, Kitagawa, Hajime, Morooka, Masami, Tanaka, Shuji
Other Authors: Yoshida Semiconductor Laboratory,
Format: Article
Language:English
Published: Universitätsbibliothek Leipzig 2016
Subjects:
Online Access:http://nbn-resolving.de/urn:nbn:de:bsz:15-qucosa-192796
http://nbn-resolving.de/urn:nbn:de:bsz:15-qucosa-192796
http://www.qucosa.de/fileadmin/data/qucosa/documents/19279/diff_fund_9%282009%294.pdf