High Precision Stress Measurements in Semiconductor Structures by Raman Microscopy
Stress in silicon structures plays an essential role in modern semiconductor technology. This stress has to be measured and due to the ongoing miniaturization in today’s semiconductor industry, the measuring method has to meet certain requirements. The present thesis deals with the question how Rama...
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| Format: | Doctoral Thesis |
| Language: | English |
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Saechsische Landesbibliothek- Staats- und Universitaetsbibliothek Dresden
2010
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| Online Access: | http://nbn-resolving.de/urn:nbn:de:bsz:14-qucosa-39924 http://nbn-resolving.de/urn:nbn:de:bsz:14-qucosa-39924 http://www.qucosa.de/fileadmin/data/qucosa/documents/3992/DissBUhlig.pdf |