Evaluation of Phosphite and Phosphane Stabilized Copper(I) Trifluoroacetates as Precursors for the Metal-Organic Chemical Vapor Deposition of Copper

Evaluation of Phosphite and Phosphane Stabilized Copper(I) Trifluoroacetates as Precursors for the Metal-Organic Chemical Vapor Deposition of Copper

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Copper has become the material of choice for metallization of high-performance ultra-large scale integrated circuits. As the feature size is continuously decreasing, metal-organic chemical vapor deposition (MOCVD) appears promising for depositing the Cu seed layer required for electroplating, as...

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Bibliographic Details
Main Authors: Waechtler, Thomas, Shen, Yingzhong, Jakob, Alexander, Ecke, Ramona, Schulz, Stefan E., Wittenbecher, Lars, Sterzel, Hans-Josef, Tiefensee, Kristin, Oswald, Steffen, Schulze, Steffen, Lang, Heinrich, Hietschold, Michael, Gessner, Thomas
Language:English
Published: Technische Universität Chemnitz 2006
Subjects:
info:eu-repo/classification/ddc/620
ddc:620
CVD-Verfahren
Kupfer
Metallisieren
ULSI
Decarboxylierung
Kupfer(I)-Carboxylat
Online Access:http://nbn-resolving.de/urn:nbn:de:swb:ch1-200600315
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