Investigation and development of advanced Si/SiGe and Si/SiGeC Heterojunction Bipolar Transistors by means of Technology Modeling
The present work investigates the technology development of state-of-the-art SiGe and SiGeC Heterojunction Bipolar Transistors (HBT) by means of technology computer aided design (TCAD). The objective of this work is to obtain an advanced HBT very close to the real device not only in its process fabr...
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| Language: | ENG |
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Université Paris Sud - Paris XI
2013
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| Online Access: | http://tel.archives-ouvertes.fr/tel-00938619 http://tel.archives-ouvertes.fr/docs/00/93/86/19/PDF/VD2_QUIROGA_ANDRES_14112013.pdf http://tel.archives-ouvertes.fr/docs/00/93/86/19/ANNEX/VD2_QUIROGA_ANDRES_14112013_Annexe_Synthese_en_francais.pdf |