Conception et caractérisation de diodes en SiC pour la détermination des coefficients d'ionisation

Conception et caractérisation de diodes en SiC pour la détermination des coefficients d'ionisation

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Le carbure de silicium (SiC) possède plusieurs propriétés exceptionnelles comme une large bande interdite, un champ électrique critique et une vitesse de saturation des porteurs élevée pour remplacer le silicium (Si) dans des domaines de fonctionnement jusque-là inaccessibles avec le Si. Un nombre i...

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Bibliographic Details
Main Author:	Nguyen, Duy Minh
Language:	FRE
Published:	INSA de Lyon 2011
Subjects:	[SPI:OTHER] Engineering Sciences/Other Electronique de puissance Diode de puissance Diode à barrière de Schottky Diode bipolaire Diode JBS Diode en SiC Diode à haute tension Mesure OBIC Courant induit par ondes optiques - OBIC Matériaux pour l'électronique Coefficient d'ionisation Diode à avalanche Diode OBIC Diode Zener
Online Access:	http://tel.archives-ouvertes.fr/tel-00679281 http://tel.archives-ouvertes.fr/docs/00/67/92/81/PDF/these.pdf

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