Study of transformation of defect states in GaN- and SiC-based materials and devices
The present thesis is a study of the evolution of defect states in devices based on wide bandgap semiconductors. The attention has been focused on light-emitting diodes based on GaN and Schottky diodes based on SiC, these latter a basic structure for the fabrication of high-power rectifiers and ioni...
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| Language: | ENG |
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2006
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| Online Access: | http://tel.archives-ouvertes.fr/tel-00443587 http://tel.archives-ouvertes.fr/docs/00/44/35/87/PDF/PhD_Thesis_Lorenzo_Rigutti.pdf |