Energy loss of light ions channeling in silicon

<p>Experimental measurements of rate of energy loss were made for protons of energy .5 to 1.6 MeV channeling through 1 μm thick silicon targets along the &lt;110&gt;, &lt;111&gt;, and &lt;211&gt; axial directions, and the {100}, {110}, {111}, and {211} planar directions...

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Main Author: Melvin, Jonathan David
Format: Others
Published: 1974
Online Access:https://thesis.library.caltech.edu/9258/1/Melvin_JD_1974.pdf
Melvin, Jonathan David (1974) Energy loss of light ions channeling in silicon. Dissertation (Ph.D.), California Institute of Technology. doi:10.7907/WJBG-JE54. https://resolver.caltech.edu/CaltechTHESIS:10292015-095449554 <https://resolver.caltech.edu/CaltechTHESIS:10292015-095449554>
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spelling ndltd-CALTECH-oai-thesis.library.caltech.edu-92582019-12-22T03:09:52Z Energy loss of light ions channeling in silicon Melvin, Jonathan David <p>Experimental measurements of rate of energy loss were made for protons of energy .5 to 1.6 MeV channeling through 1 μm thick silicon targets along the &lt;110&gt;, &lt;111&gt;, and &lt;211&gt; axial directions, and the {100}, {110}, {111}, and {211} planar directions. A .05% resolution automatically controlled magnetic spectrometer was used. The data are presented graphically along with an extensive summary of data in the literature. The data taken cover a wider range of channels than has previously been examined, and are in agreement with the data of F. Eisen, et al., Radd. Eff. 13, 93 (1972).</p> <p>The theory in the literature for channeling energy loss due to interaction with local electrons, core electrons, and distant valence electrons of the crystal atoms is summarized. Straggling is analyzed, and a computer program which calculates energy loss and straggling using this theory and the Moliere approximation to the Thomas Fermi potential, V<sub>TF</sub>, and the detailed silicon crystal structure is described. Values for the local electron density Z<sub>loc</sub> in each of the channels listed above are extracted from the data by graphical matching of the experimental and computer results.</p> <p>Zeroth and second order contributions to Z<sub>loc</sub> as a function of distance from the center of the channel were computed from ∇<sup>2</sup>V<sub>TF</sub> = 4πρ for various channels in silicon. For data taken in this work and data of F. Eisen, et al., Rad. Eff. 13, 93 (1972), the calculated zeroth order contribution to Z<sub>loc</sub> lies between the experimentally extracted Z<sub>loc</sub> values obtained by using the peak and the leading edge of the transmission spectra, suggesting that the observed straggling is due both to statistical fluctuations and to path variation.</p> 1974 Thesis NonPeerReviewed application/pdf https://thesis.library.caltech.edu/9258/1/Melvin_JD_1974.pdf https://resolver.caltech.edu/CaltechTHESIS:10292015-095449554 Melvin, Jonathan David (1974) Energy loss of light ions channeling in silicon. Dissertation (Ph.D.), California Institute of Technology. doi:10.7907/WJBG-JE54. https://resolver.caltech.edu/CaltechTHESIS:10292015-095449554 <https://resolver.caltech.edu/CaltechTHESIS:10292015-095449554> https://thesis.library.caltech.edu/9258/
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format Others
sources NDLTD
description <p>Experimental measurements of rate of energy loss were made for protons of energy .5 to 1.6 MeV channeling through 1 μm thick silicon targets along the &lt;110&gt;, &lt;111&gt;, and &lt;211&gt; axial directions, and the {100}, {110}, {111}, and {211} planar directions. A .05% resolution automatically controlled magnetic spectrometer was used. The data are presented graphically along with an extensive summary of data in the literature. The data taken cover a wider range of channels than has previously been examined, and are in agreement with the data of F. Eisen, et al., Radd. Eff. 13, 93 (1972).</p> <p>The theory in the literature for channeling energy loss due to interaction with local electrons, core electrons, and distant valence electrons of the crystal atoms is summarized. Straggling is analyzed, and a computer program which calculates energy loss and straggling using this theory and the Moliere approximation to the Thomas Fermi potential, V<sub>TF</sub>, and the detailed silicon crystal structure is described. Values for the local electron density Z<sub>loc</sub> in each of the channels listed above are extracted from the data by graphical matching of the experimental and computer results.</p> <p>Zeroth and second order contributions to Z<sub>loc</sub> as a function of distance from the center of the channel were computed from ∇<sup>2</sup>V<sub>TF</sub> = 4πρ for various channels in silicon. For data taken in this work and data of F. Eisen, et al., Rad. Eff. 13, 93 (1972), the calculated zeroth order contribution to Z<sub>loc</sub> lies between the experimentally extracted Z<sub>loc</sub> values obtained by using the peak and the leading edge of the transmission spectra, suggesting that the observed straggling is due both to statistical fluctuations and to path variation.</p>
author Melvin, Jonathan David
spellingShingle Melvin, Jonathan David
Energy loss of light ions channeling in silicon
author_facet Melvin, Jonathan David
author_sort Melvin, Jonathan David
title Energy loss of light ions channeling in silicon
title_short Energy loss of light ions channeling in silicon
title_full Energy loss of light ions channeling in silicon
title_fullStr Energy loss of light ions channeling in silicon
title_full_unstemmed Energy loss of light ions channeling in silicon
title_sort energy loss of light ions channeling in silicon
publishDate 1974
url https://thesis.library.caltech.edu/9258/1/Melvin_JD_1974.pdf
Melvin, Jonathan David (1974) Energy loss of light ions channeling in silicon. Dissertation (Ph.D.), California Institute of Technology. doi:10.7907/WJBG-JE54. https://resolver.caltech.edu/CaltechTHESIS:10292015-095449554 <https://resolver.caltech.edu/CaltechTHESIS:10292015-095449554>
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