III-V Molecular Beam Epitaxy Structures for Electronic and Optoelectronic Applications

III-V Molecular Beam Epitaxy Structures for Electronic and Optoelectronic Applications

<p>Molecular beam epitaxy (MBE), a method for depositing epitaxial semiconductor layers with an extreme degree of control, has previously been limited largely to featureless substrates. This thesis describes a procedure for high quality MBE growth over finely patterned GaAs substrates, which i...

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Bibliographic Details
Main Author: Smith, John Stephen
Format: Others
Language:en
Published: 1986
Online Access:https://thesis.library.caltech.edu/901/1/Smith_js_1986.pdf
Smith, John Stephen (1986) III-V Molecular Beam Epitaxy Structures for Electronic and Optoelectronic Applications. Dissertation (Ph.D.), California Institute of Technology. doi:10.7907/r489-8025. https://resolver.caltech.edu/CaltechETD:etd-03082008-083912 <https://resolver.caltech.edu/CaltechETD:etd-03082008-083912>

Internet

https://thesis.library.caltech.edu/901/1/Smith_js_1986.pdf
Smith, John Stephen (1986) III-V Molecular Beam Epitaxy Structures for Electronic and Optoelectronic Applications. Dissertation (Ph.D.), California Institute of Technology. doi:10.7907/r489-8025. https://resolver.caltech.edu/CaltechETD:etd-03082008-083912 <https://resolver.caltech.edu/CaltechETD:etd-03082008-083912>

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