Zn-VI/Cu2O Heterojunctions for Earth-Abundant Photovoltaics

• Main Author: Wilson, Samantha Stricklin
• Format: Others
• Published: 2015
• Online Access: https://thesis.library.caltech.edu/8874/7/SamanthaWilson_Thesis_Revised.pdf; Wilson, Samantha Stricklin (2015) Zn-VI/Cu2O Heterojunctions for Earth-Abundant Photovoltaics. Dissertation (Ph.D.), California Institute of Technology. doi:10.7907/Z9N58J9H . https://resolver.caltech.edu/CaltechTHESIS:05212015-091546304 <https://resolver.caltech.edu/CaltechTHESIS:05212015-091546304>

<p>The need for sustainable energy production motivates the study of photovoltaic materials, which convert energy from sunlight directly into electricity. This work has focused on the development of Cu₂O as an earth-abundant solar absorber due to the abundance of its constituent elements in the earth's crust, its suitable band gap, and its potential for low cost processing. Crystalline wafers of Cu₂O with minority carrier diffusion lengths on the order of microns can be manufactured in a uniquely simple fashion — directly from copper foils by thermal oxidation. Furthermore, Cu₂O has an optical band gap of 1.9 eV, which gives it a detailed balance energy conversion efficiency of 24.7% and the possibility for an independently connected Si/Cu₂O dual junction with a detailed balance efficiency of 44.3%. </p> <p>However, the highest energy conversion efficiency achieved in a photovoltaic device with a Cu₂O absorber layer is currently only 5.38% despite the favorable optical and electronic properties listed above. There are several challenges to making a Cu₂O photovoltaic device, including an inability to dope the material, its relatively low chemical stability compared to other oxides, and a lack of suitable heterojunction partners due to an unusually small electron affinity. We have addressed the low chemical stability, namely the fact that Cu₂O is an especially reactive oxide due to its low enthalpy of formation (ΔH_f⁰ = -168.7 kJ/mol), by developing a novel surface preparation technique. We have addressed the lack of suitable heterojunction partners by investigating the heterojunction band alignment of several Zn-VI materials with Cu₂O. Finally, We have addressed the typically high series resistance of Cu₂O wafers by developing methods to make very thin, bulk Cu₂O, including devices on Cu₂O wafers as thin as 20 microns. Using these methods we have been able to achieve photovoltages over 1 V, and have demonstrated the potential of a new heterojunction material, Zn(O,S).</p>