Double injection: high frequency noise and temperature dependence
<p>Noise measurements from 140°K to 350°K ambient temperature and between 10kHz and 22MHz performed on a double injection silicon diode as a function of operating point indicate that the high frequency noise depends linearly on the ambient temperature T and on the differential conductance g me...
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| Format: | Others |
| Language: | en |
| Published: |
1969
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| Online Access: | https://thesis.library.caltech.edu/8676/1/Lee_DH_1969.pdf Lee, Don Howard (1969) Double injection: high frequency noise and temperature dependence. Dissertation (Ph.D.), California Institute of Technology. doi:10.7907/964x-ab98. https://resolver.caltech.edu/CaltechTHESIS:10072014-144607202 <https://resolver.caltech.edu/CaltechTHESIS:10072014-144607202> |
| Summary: | <p>Noise measurements from 140°K to 350°K ambient temperature and between 10kHz and 22MHz performed on a double injection silicon diode as a function of operating point indicate that the high frequency noise depends linearly on the ambient temperature T and on the differential conductance g measured at the same frequency. The noise is represented quantitatively by〈i^2〉 = α•4kTgΔf. A new interpretation demands Nyquist noise with α ≡ 1 in these devices at high frequencies. This is in accord with an equivalent circuit derived for the double injection process. The effects of diode geometry on the static I-V characteristic as well as on the ac properties are illustrated. Investigation of the temperature dependence of double injection yields measurements of the temperature variation of the common high-level lifetime τ(τ ∝ T^2), the hole conductivity mobility µ_p (µ_p ∝ T^(-2.18)) and the electron conductivity mobility µ_n(µ_n ∝ T^(-1.75)).</p> |
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