Double injection: high frequency noise and temperature dependence
<p>Noise measurements from 140°K to 350°K ambient temperature and between 10kHz and 22MHz performed on a double injection silicon diode as a function of operating point indicate that the high frequency noise depends linearly on the ambient temperature T and on the differential conductance g me...
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| Format: | Others |
| Language: | en |
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1969
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| Online Access: | https://thesis.library.caltech.edu/8676/1/Lee_DH_1969.pdf Lee, Don Howard (1969) Double injection: high frequency noise and temperature dependence. Dissertation (Ph.D.), California Institute of Technology. doi:10.7907/964x-ab98. https://resolver.caltech.edu/CaltechTHESIS:10072014-144607202 <https://resolver.caltech.edu/CaltechTHESIS:10072014-144607202> |
Internet
https://thesis.library.caltech.edu/8676/1/Lee_DH_1969.pdfLee, Don Howard (1969) Double injection: high frequency noise and temperature dependence. Dissertation (Ph.D.), California Institute of Technology. doi:10.7907/964x-ab98. https://resolver.caltech.edu/CaltechTHESIS:10072014-144607202 <https://resolver.caltech.edu/CaltechTHESIS:10072014-144607202>