I. A recirculating charged-couple device. II. The mercury selenide on N-silicon Schottky barrier
<p>A recirculating charge-coupled device structure has been devised. Entrance and exit gates allow a signal to be admitted, recirculated a given number of times, and then examined. In this way a small device permits simulation of a very long shift register without passing the signal throu...
| Summary: | <p>A recirculating charge-coupled device structure has
been devised. Entrance and exit gates allow a signal to be
admitted, recirculated a given number of times, and then
examined. In this way a small device permits simulation
of a very long shift register without passing the signal
through input and output diffusions. An oscilloscope
motion picture demonstrating degradation of an actual
circulating signal has been made. The performance of the
device in simulating degradation of a signal by a very long
shift register is well fit by a simple model based on
transfer inefficiency.</p>
<p>Electrical properties of the mercury selenide on
n-type chemically-cleaned silicon Schottky barrier have
been studied. Barrier heights measured were 0.96 volts
for the photoresponse technique and 0.90 volts for the
current-voltage technique. These are the highest barriers
yet reported on n-type silicon.</p> |
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