Measurement of the Band Bending and Surface Dipole at Chemically Functionalized Si(111)/Vacuum Interfaces

Measurement of the Band Bending and Surface Dipole at Chemically Functionalized Si(111)/Vacuum Interfaces

<p>The core-level energy shifts observed using X-ray photoelectron spectroscopy (XPS) have been used to determine the band bending at Si(111) surfaces terminated with Si-Br, Si-H, and Si-CH<sub>3</sub> groups, respectively. The surface termination influenced the band bending, with...

Full description

Bibliographic Details
Main Author: Gleason-Rohrer, David Charles
Format: Others
Published: 2014
Online Access:https://thesis.library.caltech.edu/8032/1/GleasonRohrer2013thesis.pdf
Gleason-Rohrer, David Charles (2014) Measurement of the Band Bending and Surface Dipole at Chemically Functionalized Si(111)/Vacuum Interfaces. Dissertation (Ph.D.), California Institute of Technology. doi:10.7907/PD7F-P488. https://resolver.caltech.edu/CaltechTHESIS:11202013-144350295 <https://resolver.caltech.edu/CaltechTHESIS:11202013-144350295>

Internet

https://thesis.library.caltech.edu/8032/1/GleasonRohrer2013thesis.pdf
Gleason-Rohrer, David Charles (2014) Measurement of the Band Bending and Surface Dipole at Chemically Functionalized Si(111)/Vacuum Interfaces. Dissertation (Ph.D.), California Institute of Technology. doi:10.7907/PD7F-P488. https://resolver.caltech.edu/CaltechTHESIS:11202013-144350295 <https://resolver.caltech.edu/CaltechTHESIS:11202013-144350295>

Similar Items