Measurement of the electron drift velocity in silicon

Measurement of the electron drift velocity in silicon

NOTE: Text or symbols not renderable in plain ASCII are indicated by [...]. Abstract is included in .pdf document. The drift velocity of electrons in silicon at high electric fields is measured in the <111> direction over the range of lattice temperatures from 4.2[degrees]K to 300[degrees]...

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Bibliographic Details
Main Author: Rodriguez, Valentin
Format: Others
Published: 1969
Online Access:https://thesis.library.caltech.edu/3803/1/Rodriguez_v_1969.pdf
Rodriguez, Valentin (1969) Measurement of the electron drift velocity in silicon. Dissertation (Ph.D.), California Institute of Technology. doi:10.7907/B8ER-9195. https://resolver.caltech.edu/CaltechETD:etd-09272002-164439 <https://resolver.caltech.edu/CaltechETD:etd-09272002-164439>

Internet

https://thesis.library.caltech.edu/3803/1/Rodriguez_v_1969.pdf
Rodriguez, Valentin (1969) Measurement of the electron drift velocity in silicon. Dissertation (Ph.D.), California Institute of Technology. doi:10.7907/B8ER-9195. https://resolver.caltech.edu/CaltechETD:etd-09272002-164439 <https://resolver.caltech.edu/CaltechETD:etd-09272002-164439>

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