Engineering the Electron-Hole Bilayer Tunneling Field-Effect Transistor
The electron-hole (EH) bilayer tunneling field-effect transistor promises to eliminate heavy-doping band tails enabling a smaller subthreshold swing voltage. Nevertheless, the electrostatics of a thin structure must be optimized for gate efficiency. We analyze the tradeoff between gate efficiency ve...
Main Authors: | , , , , |
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Other Authors: | , |
Format: | Article |
Language: | English |
Published: |
Institute of Electrical and Electronics Engineers (IEEE),
2015-11-05T13:25:47Z.
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Subjects: | |
Online Access: | Get fulltext |
Summary: | The electron-hole (EH) bilayer tunneling field-effect transistor promises to eliminate heavy-doping band tails enabling a smaller subthreshold swing voltage. Nevertheless, the electrostatics of a thin structure must be optimized for gate efficiency. We analyze the tradeoff between gate efficiency versus ON-state conductance to find the optimal device design. Once the EH bilayer is optimized for a given ON-state conductance, Si, Ge, and InAs all have similar gate efficiency, around 40%-50%. Unlike Si and Ge, only the InAs case allows a manageable work function difference for EH bilayer transistor operation. National Science Foundation (U.S.). Center for Energy Efficient Electronics Science (Award 0939514) |
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