Quantum Spin Hall Effect and Topological Field Effect Transistor in Two-Dimensional Transition Metal Dichalcogenides

Quantum Spin Hall Effect and Topological Field Effect Transistor in Two-Dimensional Transition Metal Dichalcogenides

Quantum spin Hall (QSH) effect materials feature edge states that are topologically protected from backscattering. However, the small band gap in materials that have been identified as QSH insulators limits applications. We use first-principles calculations to predict a class of large-gap QSH insula...

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Bibliographic Details
Main Authors: Qian, Xiaofeng (Contributor), Liu, Junwei (Contributor), Fu, Liang (Contributor), Li, Ju (Contributor)
Other Authors: Massachusetts Institute of Technology. Materials Processing Center (Contributor), Massachusetts Institute of Technology. Department of Materials Science and Engineering (Contributor), Massachusetts Institute of Technology. Department of Nuclear Science and Engineering (Contributor), Massachusetts Institute of Technology. Department of Physics (Contributor)
Format: Article
Language:English
Published: American Association for the Advancement of Science (AAAS), 2014-11-21T16:52:10Z.
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