Current-driven dynamics of Dzyaloshinskii domain walls in the presence of in-plane fields: Full micromagnetic and one-dimensional analysis

• Main Authors: Martinez, Eduardo (Author), Emori, Satoru (Contributor), Perez, Noel (Author), Torres, Luis (Author), Beach, Geoffrey Stephen (Contributor)
• Other Authors: Massachusetts Institute of Technology. Department of Materials Science and Engineering (Contributor)
• Format: Article
• Language: English
• Published: American Institute of Physics, 2014-11-19T21:50:52Z.
• Subjects: Article
• Online Access: Get fulltext

Current-induced domain wall motion along high perpendicular magnetocrystalline anisotropy multilayers is studied by means of full micromagnetic simulations and a one-dimensional model in the presence of in-plane fields. We consider domain wall motion driven by the spin Hall effect in the presence of the Dzyaloshinskii-Moriya interaction (DMI). In the case of relatively weak DMI, the wall propagates without significant tilting of the wall plane, and the full micromagnetic results are quantitatively reproduced by a simple rigid one-dimensional model. By contrast, significant wall-plane tilting is observed in the case of strong DMI, and a one-dimensional description including the wall tilting is required to qualitatively describe the micromagnetic results. However, in this strong-DMI case, the one-dimensional model exhibits significant quantitative discrepancies from the full micromagnetic results, in particular, when high longitudinal fields are applied in the direction of the internal domain wall magnetization. It is also shown that, even under thermal fluctuations and edge roughness, the domain wall develops a net tilting angle during its current-induced motion along samples with strong DMI.
Castilla y León (Spain). Junta (Project SA163A12)
Spain (project MAT2011-28532-C03-01)
Microelectronics Advanced Research Corporation (MARCO) (C-SPIN)
United States. Defense Advanced Research Projects Agency (C-SPIN, one of the six SRC STARnet Centers)
National Science Foundation (U.S.) (NSF-ECCS-1128439)