Photoexcited carrier dynamics and impact-excitation cascade in graphene

In materials with strong electron-electron interactions, photoexcitation can trigger a cascade in which multiple particle-hole excitations are generated. Here we analyze the cascade of impact-excitation processes in graphene in which many hot carriers are generated by a single absorbed photon. We sh...

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Bibliographic Details
Main Authors: Tielrooij, Klaas J. (Author), Koppens, Frank Henricus Louis (Author), Song, Justin Chien Wen (Contributor), Levitov, Leonid (Contributor)
Other Authors: Massachusetts Institute of Technology. Department of Physics (Contributor)
Format: Article
Language:English
Published: American Physical Society, 2014-08-19T14:47:42Z.
Subjects:
Online Access:Get fulltext
LEADER 01493 am a22002293u 4500
001 88788
042 |a dc 
100 1 0 |a Tielrooij, Klaas J.  |e author 
100 1 0 |a Massachusetts Institute of Technology. Department of Physics  |e contributor 
100 1 0 |a Song, Justin Chien Wen  |e contributor 
100 1 0 |a Levitov, Leonid  |e contributor 
700 1 0 |a Koppens, Frank Henricus Louis  |e author 
700 1 0 |a Song, Justin Chien Wen  |e author 
700 1 0 |a Levitov, Leonid  |e author 
245 0 0 |a Photoexcited carrier dynamics and impact-excitation cascade in graphene 
260 |b American Physical Society,   |c 2014-08-19T14:47:42Z. 
856 |z Get fulltext  |u http://hdl.handle.net/1721.1/88788 
520 |a In materials with strong electron-electron interactions, photoexcitation can trigger a cascade in which multiple particle-hole excitations are generated. Here we analyze the cascade of impact-excitation processes in graphene in which many hot carriers are generated by a single absorbed photon. We show that the number of generated carriers has a strong dependence on doping (gate tunability). Linear scaling with photon energy is predicted for the number of pairs and for the duration of the cascade. These dependencies, along with a sharply peaked angular distribution of excited carriers, provide clear experimental signatures of hot carrier multiplication. 
520 |a United States. Office of Naval Research (Grant N00014-09-1-0724) 
546 |a en_US 
655 7 |a Article 
773 |t Physical Review B