Visible and Infra-red Light Emission in Boron-Doped Wurtzite Silicon Nanowires

Silicon, the mainstay semiconductor in microelectronic circuitry, is considered unsuitable for optoelectronic applications owing to its indirect electronic band gap, which limits its efficiency as a light emitter. Here we show the light emission properties of boron-doped wurtzite silicon nanowires m...

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Bibliographic Details
Main Authors: Fabbri, Filippo (Contributor), Rotunno, Enzo (Author), Lazzarini, Laura (Author), Fukata, Naoki (Author), Salviati, Giancarlo (Author)
Other Authors: Massachusetts Institute of Technology. Department of Materials Science and Engineering (Contributor)
Format: Article
Language:English
Published: Nature Publishing Group, 2014-05-30T16:58:44Z.
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