Visible and Infra-red Light Emission in Boron-Doped Wurtzite Silicon Nanowires
Silicon, the mainstay semiconductor in microelectronic circuitry, is considered unsuitable for optoelectronic applications owing to its indirect electronic band gap, which limits its efficiency as a light emitter. Here we show the light emission properties of boron-doped wurtzite silicon nanowires m...
Main Authors: | Fabbri, Filippo (Contributor), Rotunno, Enzo (Author), Lazzarini, Laura (Author), Fukata, Naoki (Author), Salviati, Giancarlo (Author) |
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Other Authors: | Massachusetts Institute of Technology. Department of Materials Science and Engineering (Contributor) |
Format: | Article |
Language: | English |
Published: |
Nature Publishing Group,
2014-05-30T16:58:44Z.
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Subjects: | |
Online Access: | Get fulltext |
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